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DMN4027SSD
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
40
?
?
?
?
?
?
0.5
? 100
V
μA
nA
I D = 250μA, V GS = 0V
V DS = 40V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
0.017
0.031
22.8
0.86
12.1
5.1
3.0
0.027
0.047
?
1.1
?
?
V
?
S
V
ns
nC
I D = 250μA, V DS = V GS
V GS = 10V, I D = 7A
V GS = 4.5V, I D = 6A
V DS = 15V, I D = 7A
I S = 7A, V GS = 0V
I S = 2.1A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C iss
?
604
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge Note 14)
C oss
C rss
Q g
Q g
?
?
??
?
106
59.6
6.3
12.9
?
?
??
?
pF
pF
nC
nC
V DS = 20V, V GS = 0V
f = 1MHz
V GS = 4.5V
V DS = 20V
Gate-Source Charge Note 14)
Gate-Drain Charge Note 14)
Turn-On Delay Time Note 14)
Q gs
Q gd
t D(on)
?
?
?
2.4
3.3
3.1
?
?
?
nC
nC
ns
V GS = 10V
I D = 7A
Turn-On Rise Time Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time Note 14)
t r
t D(off)
t f
?
?
?
3.1
15.4
7.5
?
?
?
ns
ns
ns
V DD = 20V, V GS = 10V
I D = 1A, R G ? 6.0 ?
Notes:
12. Measured under pulsed conditions. Pulse width ? 300μs; duty cycle ? 2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMN4027SSD
Document Number DS33040 Rev 2 - 2
4 of 8
www.diodes.com
April 2013
? Diodes Incorporated
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